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1. product profile 1.1 general description silicon monolithic microwave in tegrated circuit ( mmic) wideband amplif ier with internal matching circuit in a 6-pin sot363 plastic smd package. 1.2 features ? input internally matched to 50 ? a gain of 32.2 db at 950 mhz ? output power at 1 db gain compression = 8 dbm ? supply current = 29.9 ma at a supply voltage of 5 v ? reverse isolation > 34 db up to 2 ghz ? good linearity with low second order and third order products ? noise figure = 3.9 db at 950 mhz ? unconditionally stable (k > 1) ? no output inductor required 1.3 applications ? lnb if amplifiers ? general purpose low noise wideband amplifier for frequencies between dc and 2.2 ghz 2. pinning information BGA2865 mmic wideband amplifier rev. 1 ? 17 august 2010 product data sheet table 1. pinning pin description simplified outline graphic symbol 1v cc 2, 5 gnd2 3rf_out 4 gnd1 6rf_in 13 2 4 5 6 sym05 2 1 3 2, 5 6 4
BGA2865 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 17 august 2010 2 of 18 nxp semiconductors BGA2865 mmic wideband amplifier 3. ordering information 4. marking 5. limiting values 6. thermal characteristics 7. characteristics table 2. ordering information type number package name description version BGA2865 - plastic surface-mounted package; 6 leads sot363 table 3. marking type number marking code description BGA2865 *ec * = - : made in hong kong * = p : made in hong kong * = w : made in china * = t : made in malaysia table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v cc supply voltage rf input ac coupled 4.5 5.5 v i cc supply current - 36 ma p tot total power dissipation t sp = 90 c-200mw t stg storage temperature ? 40 +125 c t j junction temperature - 125 c p drive drive power - ? 21 dbm table 5. thermal characteristics symbol parameter conditions typ unit r th(j-sp) thermal resistance from junction to solder point p tot = 200 mw; t sp =90 c 300 k/w table 6. characteristics v cc = 5.0 v; z s = z l = 50 ; p i = ? 35 dbm; t amb = 25 c; measured on demo board; unless otherwise specified. symbol parameter conditions min typ max unit v cc supply voltage 4.5 5.0 5.5 v i cc supply current 23.0 26.4 29.7 ma
BGA2865 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 17 august 2010 3 of 18 nxp semiconductors BGA2865 mmic wideband amplifier g p power gain f = 250 mhz 30.3 30.9 31.5 db f = 950 mhz 31.5 32.2 32.9 db f = 2150 mhz 28.1 29.6 31.1 db rl in input return loss f = 250 mhz 14 16 18 db f = 950 mhz 171820db f = 2150 mhz 10 11 18 db rl out output return loss f = 250 mhz 14 18 23 db f = 950 mhz 9 10 11 db f = 2150 mhz 7 9 12 db isl isolation f = 250 mhz 41 61 82 db f = 950 mhz 414344db f = 2150 mhz 34 37 39 db nf noise figure f = 250 mhz 3.4 3.8 4.3 db f = 950 mhz 3.4 3.9 4.3 db f = 2150 mhz 3.6 4.0 4.5 db b ? 3db ? 3 db bandwidth 3 db below gain at 1 ghz 2.1 2.2 2.4 ghz k rollett stability factor f = 250 mhz 14 16 18 f = 950 mhz 1.2 1.5 1.8 f = 2150 mhz 0.9 1.2 1.4 p l(sat) saturated output power f = 250 mhz 10 11 12 dbm f = 950 mhz 8 9 10 dbm f = 2150 mhz 2 3 5 dbm p l(1db) output power at 1 db gain compression f = 250 mhz 8 9 10 dbm f = 950 mhz 6 8 9 dbm f = 2150 mhz 1 2 3 dbm ip3 i input third-order intercept point p drive = ? 38 dbm (for each tone) f 1 = 250 mhz; f 2 = 251 mhz ? 13 ? 11 ? 8dbm f 1 = 950 mhz; f 2 = 951 mhz ? 16 ? 14 ? 11 dbm f 1 =2150mhz; f 2 =2151mhz ? 23 ? 20 ? 17 dbm ip3 o output third-order intercept point p drive = ? 38 dbm (for each tone) f 1 = 250 mhz; f 2 =251mhz 182022dbm f 1 = 950 mhz; f 2 =951mhz 161921dbm f 1 =2150mhz; f 2 =2151mhz 7 10 13 dbm p l(2h) second harmonic output power p drive = ? 35 dbm f 1h = 250 mhz; f 2h =500mhz ? 52 ? 50 ? 48 dbm f 1h = 950 mhz; f 2h =1900mhz ? 42 ? 40 ? 39 dbm im2 second-order intermodulation distance p drive = ? 38 dbm (for each tone) f 1 = 250 mhz; f 2 =251mhz 364758dbc f 1 = 950 mhz; f 2 =951mhz 253748dbc table 6. characteristics ?continued v cc = 5.0 v; z s = z l = 50 ; p i = ? 35 dbm; t amb = 25 c; measured on demo board; unless otherwise specified. symbol parameter conditions min typ max unit
BGA2865 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 17 august 2010 4 of 18 nxp semiconductors BGA2865 mmic wideband amplifier 8. application information figure 1 shows a typical application circuit for the BGA2865 mmic. the device is internally matched to 50 and therefore does not need any external matching. the value of the input and output dc blocking capacitors c2 and c3 should not be more than 100 pf for applications above 100 mhz. however, when the device is operated below 100 mhz, the capacitor value sh ould be increased. the 22 nf supply decoupling capacitor c1 shou ld be located as close as possible to the mmic. the pcb top ground plane, connected to pins 2, 4 and 5 must be as close as possible to the mmic, preferably also be low the mmic. when using via holes, use multiple via holes as close as possible to the mmic. 8.1 application examples fig 1. typical appl ication circuit 001aaf76 1 rf_out rf_in gnd2 v s v s gnd1 rf output rf input c3 c2 c1 the mmic is very suitable as if amplifier in e.g. lnb?s. the excellent wideband characteristics make it an easy building block. as second amplifier after an lna, the mmic offers an easy matching, low noise solution. fig 2. application as if amplifier fig 3. application as rf amplifier 001aaf76 2 from rf circuit oscillator wideband amplifier to if circuit or demodulator mixer 001aaf76 3 antenna oscillator wideband amplifier lna to if circuit or demodulator mixer
BGA2865 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 17 august 2010 5 of 18 nxp semiconductors BGA2865 mmic wideband amplifier 8.2 graphs t amb =25 c; i cc = 25.6 ma; v cc = 5.0 v; z 0 =50 . (1) f = 250 mhz (2) f = 950 mhz (3) f = 2150 mhz fig 4. input reflection coefficient (s 11 ); typical values 001aam310 90 ? 90 5 0.5 0.2 +0.2 0 +2 +5 ? 5 ? 2 ? 0.2 +0.5 ? 0.5 +1 ? 1 2 1 10 0 0.2 0.6 0.4 0.8 1.0 1.0 ? 45 ? 135 45 135 180 0 (1) (2) (3)
BGA2865 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 17 august 2010 6 of 18 nxp semiconductors BGA2865 mmic wideband amplifier t amb =25 c; i cc = 25.6 ma; v cc = 5.0 v; z 0 =50 . (1) f = 250 mhz (2) f = 950 mhz (3) f = 2150 mhz fig 5. output reflec tion coefficient (s 22 ); typical values 001aam311 90 ? 90 5 0.5 0.2 +0.2 0 +2 +5 ? 5 ? 2 ? 0.2 +0.5 ? 0.5 +1 ? 1 2 1 10 0 0.2 0.6 0.4 0.8 1.0 1.0 ? 45 ? 135 45 135 180 0 (1) (2) (3)
BGA2865 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 17 august 2010 7 of 18 nxp semiconductors BGA2865 mmic wideband amplifier p drive = ? 40 dbm; z 0 =50 . (1) v cc = 4.5 v; t amb = 85 c; i cc = 21.70 ma (2) v cc = 4.5 v; t amb = ? 40 c; i cc = 23.82 ma (3) v cc = 5.0 v; t amb = 25 c; i cc = 25.59 ma (4) v cc = 5.5 v; t amb = 85 c; i cc = 27.33 ma (5) v cc = 5.5 v; t amb = ? 40 c; i cc = 29.30 ma p drive = ? 40 dbm; z 0 =50 . (1) v cc = 4.5 v; t amb = 85 c; i cc = 21.70 ma (2) v cc = 4.5 v; t amb = ? 40 c; i cc = 23.82 ma (3) v cc = 5.0 v; t amb = 25 c; i cc = 25.59 ma (4) v cc = 5.5 v; t amb = 85 c; i cc = 27.33 ma (5) v cc = 5.5 v; t amb = ? 40 c; i cc = 29.30 ma fig 6. rollett stability factor as function of frequency; typical values fig 7. input return loss as function of frequency; typical values 001aam312 f (ghz) 03 2 1 1 10 10 2 10 3 k 10 ? 1 (1) (2) (3) (4) (5) f (ghz) 03 2 1 001aam313 ? 20 ? 10 0 rl in (db) ? 30 (1) (2) (3) (4) (5)
BGA2865 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 17 august 2010 8 of 18 nxp semiconductors BGA2865 mmic wideband amplifier p drive = ? 40 dbm; z 0 =50 . (1) v cc = 4.5 v; t amb = 85 c; i cc = 21.70 ma (2) v cc = 4.5 v; t amb = ? 40 c; i cc = 23.82 ma (3) v cc = 5.0 v; t amb = 25 c; i cc = 25.59 ma (4) v cc = 5.5 v; t amb = 85 c; i cc = 27.33 ma (5) v cc = 5.5 v; t amb = ? 40 c; i cc = 29.30 ma p drive = ? 40 dbm; z 0 =50 . (1) v cc = 4.5 v; t amb = 85 c; i cc = 21.70 ma (2) v cc = 4.5 v; t amb = ? 40 c; i cc = 23.82 ma (3) v cc = 5.0 v; t amb = 25 c; i cc = 25.59 ma (4) v cc = 5.5 v; t amb = 85 c; i cc = 27.33 ma (5) v cc = 5.5 v; t amb = ? 40 c; i cc = 29.30 ma fig 8. output return loss as function of frequency; typical values fig 9. insertion power gain as function of frequency; typical values f (ghz) 03 2 1 001aam314 ? 20 ? 10 0 rl out (db) ? 30 (1) (2) (3) (4) (5) 001aam315 f (ghz) 03 2 1 30 34 40 g p (db) 20 (1) (2) (3) (4) (5) 25
BGA2865 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 17 august 2010 9 of 18 nxp semiconductors BGA2865 mmic wideband amplifier 8.3 tables p drive = ? 40 dbm; z 0 =50 . (1) v cc = 4.5 v; t amb = 85 c; i cc = 21.70 ma (2) v cc = 4.5 v; t amb = ? 40 c; i cc = 23.82 ma (3) v cc = 5.0 v; t amb = 25 c; i cc = 25.59 ma (4) v cc = 5.5 v; t amb = 85 c; i cc = 27.33 ma (5) v cc = 5.5 v; t amb = ? 40 c; i cc = 29.30 ma z 0 =50 . (1) v cc = 4.5 v; t amb = 85 c; i cc = 21.70 ma (2) v cc = 4.5 v; t amb = ? 40 c; i cc = 23.82 ma (3) v cc = 5.0 v; t amb = 25 c; i cc = 25.59 ma (4) v cc = 5.5 v; t amb = 85 c; i cc = 27.33 ma (5) v cc = 5.5 v; t amb = ? 40 c; i cc = 29.30 ma fig 10. isolation as function of frequency; typical values fig 11. noise figure as function of frequency; typical values 001aam316 f (ghz) 03 2 1 ? 40 ? 60 ? 20 0 isl (db) ? 80 (5) (4) (3) (2) (1) 001aam317 f (ghz) 03 2 1 6 nf (db) 3 4 5 (2) (5) (3) (1) (4) table 7. supply current over temperature and supply voltages typical values. symbol parameter conditions t amb ( c) unit ? 40 25 85 i cc supply current v cc = 4.5 v 23.82 23.00 21.70 ma v cc = 5.0 v 26.65 25.59 24.42 ma v cc = 5.5 v 29.30 27.94 27.33 ma table 8. second harmonic output power over temperature and supply voltages typical values. symbol parameter conditions t amb ( c) unit ? 40 25 85 p l(2h) second harmonic output power f = 250 mhz; p drive = ? 37 dbm v cc =4.5v ? 49 ? 51 ? 52 dbm v cc = 5.0 v ? 49 ? 50 ? 51 dbm v cc =5.5v ? 49 ? 50 ? 50 dbm f = 950 mhz; p drive = ? 37 dbm v cc =4.5v ? 40 ? 42 ? 44 dbm v cc = 5.0 v ? 40 ? 42 ? 43 dbm v cc =5.5v ? 40 ? 42 ? 43 dbm
BGA2865 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 17 august 2010 10 of 18 nxp semiconductors BGA2865 mmic wideband amplifier table 9. input power at 1 db gain compression over temperature and supply voltages typical values. symbol parameter conditions t amb ( c) unit ? 40 25 85 p i(1db) input power at 1 db gain compression f = 250 mhz v cc =4.5v ? 21.6 ? 21.6 ? 21.6 dbm v cc = 5.0 v ? 21.0 ? 21.1 ? 21.1 dbm v cc =5.5v ? 20.6 ? 20.7 ? 20.7 dbm f = 950 mhz v cc =4.5v ? 22.7 ? 22.9 ? 23.1 dbm v cc = 5.0 v ? 22.4 ? 22.6 ? 23.0 dbm v cc =5.5v ? 22.1 ? 22.4 ? 22.9 dbm f = 2150 mhz v cc =4.5v ? 25.0 ? 25.6 ? 26.4 dbm v cc = 5.0 v ? 25.1 ? 25.9 ? 26.7 dbm v cc =5.5v ? 25.2 ? 26.2 ? 27.0 dbm table 10. output power at 1 db gain compression over temperature and supply voltages typical values. symbol parameter conditions t amb ( c) unit ? 40 25 85 p l(1db) output power at 1 db gain compression f = 250 mhz v cc = 4.5 v 8.3 7.8 7.3 dbm v cc = 5.0 v 9.3 8.8 8.3 dbm v cc = 5.5 v 10.1 9.6 9.0 dbm f = 950 mhz v cc = 4.5 v 8.0 7.3 6.3 dbm v cc = 5.0 v 8.9 8.0 6.9 dbm v cc = 5.5 v 9.6 8.6 7.4 dbm f = 2150 mhz v cc = 4.5 v 4.1 2.4 0.3 dbm v cc = 5.0 v 4.5 2.6 0.2 dbm v cc = 5.5 v 4.7 2.4 0.1 dbm
BGA2865 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 17 august 2010 11 of 18 nxp semiconductors BGA2865 mmic wideband amplifier table 11. saturated output power over temperature and supply voltages typical values. symbol parameter conditions t amb ( c) unit ? 40 25 85 p l(sat) saturated output power f = 250 mhz v cc = 4.5 v 10.5 10.1 9.6 dbm v cc = 5.0 v 11.8 11.3 10.8 dbm v cc = 5.5 v 12.3 11.8 11.3 dbm f = 950 mhz v cc = 4.5 v 9.6 8.8 7.7 dbm v cc = 5.0 v 10.4 9.3 8.2 dbm v cc =5.5v 10.9 9.8 8.5 dbm f = 2150 mhz v cc = 4.5 v 5.3 3.7 2.0 dbm v cc = 5.0 v 5.7 4.0 2.0 dbm v cc = 5.5 v 5.9 4.0 2.0 dbm table 12. second-order intermodulation distance over temperature and supply voltages typical values. symbol parameter conditions t amb ( c) unit ? 40 25 85 im2 second-order intermodulation distance f 1 = 250 mhz; f 2 = 251 mhz; p drive = ? 40 dbm v cc =4.5v 50 4845dbc v cc = 5.0 v 51 48 46 dbc v cc =5.5v 51 4846dbc f 1 = 950 mhz; f 2 = 951 mhz; p drive = ? 40 dbm v cc =4.5v 41 4037dbc v cc = 5.0 v 42 39 36 dbc v cc =5.5v 41 3835dbc
BGA2865 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 17 august 2010 12 of 18 nxp semiconductors BGA2865 mmic wideband amplifier table 13. output third-order intercept point over temperature and supply voltages typical values. symbol parameter conditions t amb ( c) unit ? 40 25 85 ip3 o output third-order intercept point f 1 =250mhz; f 2 =251mhz; p drive = ? 40 dbm v cc = 4.5 v 20.8 19.2 18.1 dbm v cc = 5.0 v 21.6 21.2 20.1 dbm v cc = 5.5 v 23.3 21.0 20.5 dbm f 1 =950mhz; f 2 =951mhz; p drive = ? 40 dbm v cc = 4.5 v 20.7 18.9 16.9 dbm v cc = 5.0 v 21.3 19.4 17.4 dbm v cc = 5.5 v 21.7 19.9 17.9 dbm f 1 =2150mhz; f 2 =2151mhz; p drive = ? 40 dbm v cc = 4.5 v 12.6 10.5 8.2 dbm v cc = 5.0 v 12.9 10.8 8.4 dbm v cc = 5.5 v 13.3 10.9 8.5 dbm table 14. ? 3 db bandwidth over temperature and supply voltages typical values. symbol parameter conditions t amb ( c) unit ? 40 25 85 b ? 3db ? 3 db bandwidth v cc = 4.5 v 2.419 2.312 2.200 ghz v cc = 5.0 v 2.403 2.284 2.164 ghz v cc = 5.5 v 2.378 2.253 2.127 ghz
BGA2865 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 17 august 2010 13 of 18 nxp semiconductors BGA2865 mmic wideband amplifier 9. test information true size = 30 mm 30 mm. fig 12. pcb layout and demo board with components 001aal22 6 c2 c1 c3 ic1 30 mm 30 mm table 15. list of components used for the typical application component description value dimensions c1, c2 multilayer ceramic chip capacitor 100 pf 0603 c3 multilayer ceramic chip capacitor 22 nf 0603 ic1 BGA2865 mmic sot363
BGA2865 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 17 august 2010 14 of 18 nxp semiconductors BGA2865 mmic wideband amplifier 10. package outline fig 13. package outline sot363 references outline version european projection issue date iec jedec jeita sot363 sc-88 wb m b p d e 1 e pin 1 index a a 1 l p q detail x h e e v m a a b y 0 1 2 mm scale c x 13 2 4 5 6 plastic surface-mounted package; 6 leads sot36 3 unit a 1 max b p cd e e 1 h e l p qy w v mm 0.1 0.30 0.20 2.2 1.8 0.25 0.10 1.35 1.15 0.65 e 1.3 2.2 2.0 0.2 0.1 0.2 dimensions (mm are the original dimensions) 0.45 0.15 0.25 0.15 a 1.1 0.8 04-11-08 06-03-16
BGA2865 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 17 august 2010 15 of 18 nxp semiconductors BGA2865 mmic wideband amplifier 11. abbreviations 12. revision history table 16. abbreviations acronym description dc direct current if intermediate frequency lna low-noise amplifier lnb low-noise block converter pcb printed-circuit board rf radio frequency table 17. revision history document id release date data sheet status change notice supersedes BGA2865 v.1 20100817 product data sheet - -
BGA2865 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 17 august 2010 16 of 18 nxp semiconductors BGA2865 mmic wideband amplifier 13. legal information 13.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. 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stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this docu ment contains the product specification.
BGA2865 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 1 ? 17 august 2010 17 of 18 nxp semiconductors BGA2865 mmic wideband amplifier non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive s pecifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. 13.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 14. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors BGA2865 mmic wideband amplifier ? nxp b.v. 2010. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 17 august 2010 document identifier: BGA2865 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 15. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 1 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 thermal characteristics . . . . . . . . . . . . . . . . . . 2 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 2 8 application information. . . . . . . . . . . . . . . . . . . 4 8.1 application examples . . . . . . . . . . . . . . . . . . . . 4 8.2 graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8.3 tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 test information . . . . . . . . . . . . . . . . . . . . . . . . 13 10 package outline . . . . . . . . . . . . . . . . . . . . . . . . 14 11 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 15 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . 15 13 legal information. . . . . . . . . . . . . . . . . . . . . . . 16 13.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 16 13.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 13.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 13.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17 14 contact information. . . . . . . . . . . . . . . . . . . . . 17 15 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

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